X-ray Spectroscopy of a Rare-Earth Molecular System Measured at the Single Atom Limit at Room Temperature.

We investigate the limit of X-ray detection at room temperature on rare-earth molecular films using lanthanum and a pyridine-based dicarboxamide organic linker as a model system. Synchrotron X-ray scanning tunneling microscopy is used to probe the molecules with different coverages on a HOPG substrate. X-ray-induced photocurrent intensities are measured as a function of molecular coverage on the sample, allowing a correlation of the amount of La ions with the photocurrent signal strength. X-ray absorption spectroscopy shows cogent M4,5 absorption edges of the lanthanum ion originated by the transitions from the 3d3/2 and 3d5/2 to 4f orbitals. X-ray absorption spectra measured in the tunneling regime further reveal an X-ray excited tunneling current produced at the M4,5 absorption edge of the La ion down to the ultimate atomic limit at room temperature.

Multiquanta flux jumps in superconducting fractal.

We study the magnetic field response of millimeter scale fractal Sierpinski gaskets (SG) assembled of superconducting equilateral triangular patches. Directly imaged quantitative induction maps reveal hierarchical periodic filling of enclosed void areas with multiquanta magnetic flux, which jumps inside the voids in repeating bundles of individual flux quanta Φ0. The number Ns of entering flux quanta in different triangular voids of the SG is proportional to the linear size s of the void, while the field periodicity of flux jumps varies as 1/s. We explain this behavior by modeling the triangular voids in the SG with effective superconducting rings and by calculating their response following the London analysis of persistent currents, Js, induced by the applied field Ha and by the entering flux. With changing Ha, Js reaches a critical value in the vertex joints that connect the triangular superconducting patches and allows the giant flux jumps into the SG voids through phase slips or multiple Abrikosov vortex transfer across the vertices. The unique flux behavior in superconducting SG patterns, may be used to design tunable low-loss resonators with multi-line high-frequency spectrum for microwave technologies.

A universal metasurface transfer technique for heterogeneous integration.

Metasurfaces offer a versatile platform for engineering the wavefront of light using nanostructures with subwavelength dimensions and hold great promise for dramatically miniaturizing conventional optical elements due to their small footprint and broad functionality. However, metasurfaces so far have been mainly demonstrated on bulky and planar substrates that are often orders of magnitude thicker than the metasurface itself. Conventional substrates not only nullify the reduced footprint advantage of metasurfaces, but also limit their application scenarios. The bulk substrate also determines the metasurface dielectric environment, with potentially undesired optical effects that undermine the optical performance. Here we develop a universal polymer-assisted transfer technique to tackle this challenge by decoupling the substrate employed on the fabrication of metasurfaces from that used for the target application. As an example, Huygens' metasurfaces with 120 nm thickness in the visible range (532 nm) are demonstrated to be transferred onto a 100 nm thick freestanding SiNx membrane while maintaining excellent structural integrity and optical performance of diffraction-limited focusing. This transfer method not only enables the thinnest dielectric metalens to the best of our knowledge, but also opens up new opportunities in integrating cascaded and multilayer metasurfaces, as well as the heterogeneous integration with nonconventional substrates and various electronic/photonic devices.

Characterization of just one atom using synchrotron X-rays.

Since the discovery of X-rays by Roentgen in 1895, its use has been ubiquitous, from medical and environmental applications to materials sciences1-5. X-ray characterization requires a large number of atoms and reducing the material quantity is a long-standing goal. Here we show that X-rays can be used to characterize the elemental and chemical state of just one atom. Using a specialized tip as a detector, X-ray-excited currents generated from an iron and a terbium atom coordinated to organic ligands are detected. The fingerprints of a single atom, the L2,3 and M4,5 absorption edge signals for iron and terbium, respectively, are clearly observed in the X-ray absorption spectra. The chemical states of these atoms are characterized by means of near-edge X-ray absorption signals, in which X-ray-excited resonance tunnelling (X-ERT) is dominant for the iron atom. The X-ray signal can be sensed only when the tip is located directly above the atom in extreme proximity, which confirms atomically localized detection in the tunnelling regime. Our work connects synchrotron X-rays with a quantum tunnelling process and opens future X-rays experiments for simultaneous characterizations of elemental and chemical properties of materials at the ultimate single-atom limit.

Insulator-to-metal phase transition in a few-layered MoSe2 field effect transistor.

The metal-to-insulator phase transition (MIT) in low-dimensional materials and particularly two-dimensional layered semiconductors is exciting to explore due to the fact that it challenges the prediction that a two-dimensional system must be insulating at low temperatures. Thus, the exploration of MITs in 2D layered semiconductors expands the understanding of the underlying physics. Here we report the MIT of a few-layered MoSe2 field effect transistor under a gate bias (electric field) applied perpendicular to the MoSe2 layers. With low applied gate voltage, the conductivity as a function of temperature from 150 K to 4 K shows typical semiconducting to insulating character. Above a critical applied gate voltage, Vc, the conductivity becomes metallic (i.e., the conductivity increases continuously as a function of decreasing temperature). Evidence of a metallic state was observed using an applied gate voltage or, equivalently, increasing the density of charge carriers within the 2D channel. We analyzed the nature of the phase transition using percolation theory, where conductivity scales with the density of charge carriers as σ ∝ (n - nc)δ. The critical exponent for a percolative phase transition, δ(T), has values ranging from 1.34 (at T = 150 K) to 2 (T = 20 K), which is close to the theoretical value of 1.33 for percolation to occur. Thus we conclude that the MIT in few-layered MoSe2 is driven by charge carrier percolation. Furthermore, the conductivity does not scale with temperature, which is a hallmark of a quantum critical phase transition.

Dual-band selective circular dichroism in mid-infrared chiral metasurfaces.

Most chiral metamaterials and metasurfaces are designed to operate in a single wavelength band and with a certain circular dichroism (CD) value. Here, mid-infrared chiral metasurface absorbers with selective CD in dual-wavelength bands are designed and demonstrated. The dual-band CD selectivity and tunability in the chiral metasurface absorbers are enabled by the unique design of a unit cell with two coupled rectangular bars. It is shown that the sign of CD in each wavelength band can be independently controlled and flipped by simply adjusting the geometric parameters, the width and the length, of the vertical rectangular bars. The mechanism of the dual-band CD selection in the chiral metasurface absorber is further revealed by studying the electric field and magnetic field distributions of the antibonding and bonding modes supported in the coupled bars under circularly polarized incident light. Furthermore, the chiral resonance wavelength can be continuously increased by scaling up the geometric parameters of the metasurface unit cell. The demonstrated results will contribute to the advance of future mid-infrared applications such as chiral molecular sensing, thermophotovoltaics, and optical communication.

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch.

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al2O3/Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

Signatures of Coherent Phonon Transport in Ultralow Thermal Conductivity Two-Dimensional Ruddlesden-Popper Phase Perovskites.

An emerging class of methylammonium lead iodide (MAPbI3)-based Ruddlesden-Popper (RP) phase perovskites, BA2MAn-1PbnI3n+1 (n = 1-7), exhibit enhanced stability to environmental conditions relative to MAPbI3, yet still degrade at elevated temperatures. We experimentally determine the thermal conductivities of these layered RP phases for n = 1-6, where n defines the number of repeated perovskite octahedra per layer. We measure thermal conductivities of 0.37 ± 0.13/0.12, 0.17 ± 0.08/0.07, 0.21 ± 0.05/0.04, and 0.19 ± 0.04/0.03 W/m·K in thin films of n = 1-4 and 0.08 ± 0.06/0.04, 0.06 ± 0.04/0.03, 0.06 ± 0.03/0.03, and 0.08 ± 0.07/0.04 W/m·K in single crystals of n = 3-6. With the exception of n = 1, these thermal conductivities are lower than the range of 0.34-0.50 W/m·K reported for single-crystal MAPbI3. Reduced-order lattice dynamics modeling suggests that the initially decreasing trend of thermal conductivity in similarly oriented perovskites with increasing n may result from the transport properties of coherent phonons, emergent from the superstructure, that do not scatter at the interfaces of organic butylammonium chains and perovskite octahedra. Reduced group velocity of coherent phonons in n = 3-6, a consequence of band flattening in the phonon dispersion, is primarily responsible for their ultralow thermal conductivities. Similar effects on thermal conductivity have been experimentally demonstrated in deposited superlattices, but never in naturally defined materials such as RP phases. GIWAXS measurements reveal that higher n RP phase thin films are less orientationally controlled and therefore possess apparently elevated thermal conductivities relative to single crystals of the same n.

Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis.

Resistance switching in metal-insulator-metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. In this work, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices. Using a modified atomic layer deposition based technique known as sequential infiltration synthesis, which was developed originally for improving polymer properties such as enhanced etch resistance of electron-beam resists and for the creation of films for filtration and oleophilic applications, we are able to create ∼15 nm thick ultraporous (pore size ∼5 nm) oxide dielectrics with up to 73% porosity as the medium for filament formation. We show, using the Ag/Al2O3 system, that the ultraporous films result in ultrahigh on/off ratio (>109) at ultralow switching voltages (∼±600 mV) that are 10× smaller than those for the bulk case. In addition, the devices demonstrate fast switching, pulsed endurance up to 1 million cycles. and high temperature (125 °C) retention up to 104 s, making this approach highly promising for large-scale neuromorphic and memory applications. Additionally, this synthesis methodology provides a compatible, inexpensive route that is scalable and compatible with existing semiconductor nanofabrication methods and materials.

High broadband photoconductivity of few-layered MoS2 field-effect transistors measured using multi-terminal methods: effects of contact resistance.

Among the layered two dimensional semiconductors, molybdenum disulfide (MoS2) is considered to be an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap in the visible region, high ON/OFF current ratio in field-effect transistors (FET) and strong light-matter interaction properties. In this study, using multi-terminal measurements, we report high broadband photocurrent response (R) and external quantum efficiency (EQE) of few-atomic layered MoS2 phototransistors fabricated on a SiO2 dielectric substrate and encapsulated with a thin transparent polymer film of Cytop. The photocurrent response was measured using a white light source as well as a monochromatic light of wavelength λ = 400 nm-900 nm. We measured responsivity using a 2-terminal configuration as high as R = 1 × 103 A W-1 under white light illumination with an optical power Popt = 0.02 nW. The R value increased to 3.5 × 103 A W-1 when measured using a 4-terminal configuration. Using monochromatic light on the same device, the measured values of R were 103 and 6 × 103 A W-1 under illumination of λ = 400 nm when measured using 2- and 4-terminal methods, respectively. The highest EQE values obtained using λ = 400 nm were 105% and 106% measured using 2- and 4-terminal configurations, respectively. The wavelength dependent responsivity decreased from 400 nm to the near-IR region at 900 nm. The observed photoresponse, photocurrent-dark current ratio (PDCR), detectivity as a function of applied gate voltage, optical power, contact resistances and wavelength were measured and are discussed in detail. The observed responsivity is also thoroughly studied as a function of contact resistance of the device.

Chiral plasmonic metasurface absorbers in the mid-infrared wavelength range.

Chiral metamaterials in the mid-infrared wavelength range have tremendous potential for studying thermal emission manipulation and molecular vibration sensing. Here, we present one type of chiral plasmonic metasurface absorber with high circular dichroism (CD) in absorption of more than 0.56 across the mid-infrared wavelength range of 5-5.5 µm. The demonstrated chiral metasurface absorbers exhibit a maximum chiral absorption of 0.87 and a maximum CD in absorption of around 0.60. By adjusting the geometric parameters of the unit cell structure of the metasurface, the chiral absorption peak can be shifted to different wavelengths. Due to the strong chiroptical response, the thermal analysis of the designed chiral metasurface absorber further shows the large temperature difference between the left-handed and right-handed circularly polarized light. The demonstrated results can be utilized in various applications such as molecular detection, mid-infrared filter, thermal emission, and chiral imaging.

A variable X-ray chopper system for phase-sensitive detection in synchrotron X-ray scanning tunneling microscopy.

An ultra-high-vacuum compatible X-ray chopper system has been designed, constructed and integrated into the XTIP beamline at the Advanced Photon Source at Argonne National Laboratory. The XTIP beamline can operate at soft X-ray energies from 400 eV to 1900 eV while providing a focused beam down to about 10 µm × 10 µm into the synchrotron X-ray scanning tunneling microscopy (SX-STM) endstation instrument. The X-ray chopper is a critical component for separating topographic information from chemical information in SX-STM through phase-sensitive current detection. Depending on the experimental needs, the modulation frequency can be controlled from 100 Hz to 10 kHz. In addition, the chopper system is fully bakeable and can achieve a base pressure of 10-10 mbar. Facilities for active water cooling have been designed, but passive cooling through copper braids has been shown to be sufficient at standard chopping frequencies. Using an Fe/Al2O3/CoAl(111) sample, the separation of the SX-STM current into a chemical component and a stable feedback signal is demonstrated.

Plasmon-phonon coupling between mid-infrared chiral metasurfaces and molecular vibrations.

Plasmon-phonon coupling between metamaterials and molecular vibrations provides a new path for studying mid-infrared light-matter interactions and molecular detection. So far, the coupling between the plasmonic resonances of metamaterials and the phonon vibrational modes of molecules has been realized under linearly polarized light. Here, mid-infrared chiral plasmonic metasurfaces with high circular dichroism (CD) in absorption over 0.65 in the frequency range of 50 to 60 THz are demonstrated to strongly interact with the phonon vibrational resonance of polymethyl methacrylate (PMMA) molecules at 52 THz, under both left-handed and right-handed circularly polarized (LCP and RCP) light. The mode splitting features in the absorption spectra of the coupled metasurface-PMMA systems under both circular polarizations are studied in PMMA layers with different thicknesses. The relation between the mode splitting gap and the PMMA thickness is also revealed. The demonstrated results can be applied in areas of chiral molecular sensing, thermal emission, and thermal energy harvesting.

XTIP - the world's first beamline dedicated to the synchrotron X-ray scanning tunneling microscopy technique.

In recent years, there have been numerous efforts worldwide to develop the synchrotron X-ray scanning tunneling microscopy (SX-STM) technique. Here, the inauguration of XTIP, the world's first beamline fully dedicated to SX-STM, is reported. The XTIP beamline is located at Sector 4 of the Advanced Photon Source at Argonne National Laboratory. It features an insertion device that can provide left- or right-circular as well as horizontal- and vertical-linear polarization. XTIP delivers monochromatic soft X-rays of between 400 and 1900 eV focused into an environmental enclosure that houses the endstation instrument. This article discusses the beamline system design and its performance.

Broadband infrared circular dichroism in chiral metasurface absorbers.

Chirality is ubiquitous in nature and it is essential in many fields, but natural materials possess weak and narrow-band chiroptical effects. Here, chiral plasmonic metasurface absorbers are designed and demonstrated to achieve large broadband infrared circular dichroism (CD). The broadband chiral absorber is made of multiple double-rectangle resonators with different sizes, showing strong absorption of left-handed or right-handed circularly polarized (LCP or RCP) light above 0.7 and large CD in absorption more than 0.5 covering the wavelength range from 1.35 µm to 1.85 µm. High broadband polarization-dependent local temperature increase is also obtained. The switchable infrared reflective chiral images are further presented by changing the wavelength and polarization of incident light. The broadband chiral metasurface absorbers promise future applications in many areas such as polarization detection, thermophotovoltaics, and chiral imaging.

Strong circular dichroism in chiral plasmonic metasurfaces optimized by micro-genetic algorithm.

Strong circular dichroism in absorption in the near-infrared wavelength range is realized by designing binary-pattern chiral plasmonic metasurfaces via the micro-genetic algorithm optimization method. The influence of geometric parameter modifications in the binary-pattern nanostructures on the circular dichroism performance is studied. The strong circular dichroism in absorption is attributed to the simultaneous excitation and field interference of the resonant modes with relative phase delay under linearly polarized incident light. This work provides a universal design method toward the on-demand properties of chiral metasurfaces, which paves the way for future applications in chemical and biological sensing, chiral imaging and spectroscopy.

Raman and electrical transport properties of few-layered arsenic-doped black phosphorus.

Black phosphorus (b-P) is an allotrope of phosphorus whose properties have attracted great attention. In contrast to other 2D compounds, or pristine b-P, the properties of b-P alloys have yet to be explored. In this report, we present a detailed study on the Raman spectra and on the temperature dependence of the electrical transport properties of As-doped black phosphorus (b-AsP) for an As fraction x = 0.25. The observed complex Raman spectra were interpreted with the support of Density Functional Theory (DFT) calculations since each original mode splits in three due to P-P, P-As, and As-As bonds. Field-effect transistors (FET) fabricated from few-layered b-AsP exfoliated onto Si/SiO2 substrates exhibit hole-doped like conduction with a room temperature ON/OFF current ratio of ∼103 and an intrinsic field-effect mobility approaching ∼300 cm2 V-1 s-1 at 300 K which increases up to 600 cm2 V-1 s-1 at 100 K when measured via a 4-terminal method. Remarkably, these values are comparable to, or higher, than those initially reported for pristine b-P, indicating that this level of As doping is not detrimental to its transport properties. The ON to OFF current ratio is observed to increase up to 105 at 4 K. At high gate voltages b-AsP displays metallic behavior with the resistivity decreasing with decreasing temperature and saturating below T ∼100 K, indicating a gate-induced insulator to metal transition. Similarly to pristine b-P, its transport properties reveal a high anisotropy between armchair (AC) and zig-zag (ZZ) directions. Electronic band structure computed through periodic dispersion-corrected hybrid Density Functional Theory (DFT) indicate close proximity between the Fermi level and the top of the valence band(s) thus explaining its hole doped character. Our study shows that b-AsP has potential for optoelectronics applications that benefit from its anisotropic character and the ability to tune its band gap as a function of the number of layers and As content.

Nonlinear Mode Coupling and One-to-One Internal Resonances in a Monolayer WS2 Nanoresonator.

Nanomechanical resonators make exquisite force sensors due to their small footprint, low dissipation, and high frequencies. Because the lowest resolvable force is limited by ambient thermal noise, resonators are either operated at cryogenic temperatures or coupled to a high-finesse optical or microwave cavity to reach sub aN Hz-1/2 sensitivity. Here, we show that operating a monolayer WS2 nanoresonator in the strongly nonlinear regime can lead to comparable force sensitivities at room temperature. Cavity interferometry was used to transduce the nonlinear response of the nanoresonator, which was characterized by multiple pairs of 1:1 internal resonance. Some of the modes exhibited exotic line shapes due to the appearance of Hopf bifurcations, where the bifurcation frequency varied linearly with the driving force and forms the basis of the advanced sensing modality. The modality is less sensitive to the measurement bandwidth, limited only by the intrinsic frequency fluctuations, and therefore, advantageous in the detection of weak incoherent forces.

Silicon compatible Sn-based resistive switching memory.

Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) - which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO2 or Al2O3)/inert cathode device - possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. Herein, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO2, we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. The time to threshold is shown to be a function of both the voltage stress (Vstress) as well as the initial leakage current (I0) through the device.

Near-infrared chiral plasmonic metasurface absorbers.

Chirality plays an essential role in the fields of biology, medicine and physics. However, natural materials exhibit very weak chiroptical response. In this paper, near-infrared chiral plasmonic metasurface absorbers are demonstrated to selectively absorb either the left-handed or right-handed circularly polarized light for achieving large circular dichroism (CD) across the wavelength range from 1.3 µm to 1.8 µm. It is shown that the maximum chiral absorption can reach to 0.87 and that the maximum CD in absorption is around 0.70. The current chiral metasurface design is able to achieve strong chiroptical response, which also leads to high thermal CD for the local temperature increase. The high-contrast reflective chiral images are also realized with the designed metasurface absorbers. The demonstrated chiral metasurface absorbers can be applied in many areas, such as optical filters, thermal energy harvesting, optical communication, and chiral imaging.